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Design and Simulation of a Low PDP Full Adder by Combining Majority Function and TGDI Technique in CNTFET Technology

Authors :

Mahsa Mohammadi¹

1- Department of Electrical Engineering

Keywords :

Full adder،Majority Function،TGDI،PDP،CNTFET

Abstract :

In this study, a full adder based on the transmission gate diffusion input (TGDI) technique and majority function is presented in carbon nanotube field-effect transistor (CNTFET) technology. The proposed design consists of 18 transistors and is simulated using HSPICE software at a voltage of 0.8 V, a frequency of 500 MHz, and a load capacitance of 1 fF in 32 nm technology. The simulation results show the reasonable performance of the sum and carry output signals as well as the improvement in power consumption, latency, power-delay product (PDP), and energy-delay product (EDP). The power consumption and delay of the proposed design are, respectively, 697 nW and 13.8 ps, which result in a PDP of 9.67 fJ and an EDP of 1.34 × 10 -28 Js.

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Design and Simulation of a Low PDP Full Adder by Combining Majority Function and TGDI Technique in CNTFET Technology

Mahsa Mohammadi

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